These days, there’s quite a buzz around Samsung as it’s reportedly making strides to overhaul its 6th-generation 1c DRAM. The aim? To boost yield rates and get a leg up in the race toward developing its next-gen HBM4 process.
Reimagining Samsung’s 1c DRAM is a big deal for the company, particularly because of its connection to the HBM4 technology, a linchpin in their memory business strategy. Based on a scoop from ZDNet Korea, Samsung has been fiddling with various designs for its DRAM processes since the latter half of 2024. The tech titan has opted to rework its sophisticated 1c DRAM in hopes of avoiding the stumbling blocks faced during the integration of HBM3 variants by key players like NVIDIA.
According to insights, the company’s avant-garde DRAM process hasn’t met the expected yield rates, which hover around 60% to 70%. This shortfall is why Samsung hasn’t moved forward with mass production. The issue seems deeply rooted in the chip’s dimensions. Originally, Samsung’s strategy was to shrink the chip size to ramp up production volumes, but this move compromised process stability, leading to disappointing yield rates.
ZDNet Korea revealed that Samsung has realigned its strategy by redesigning the 1c DRAM, opting to expand the chip size with a primary focus on improving yields, eyeing a mid-year target. It looks like Samsung is betting on steady mass production of next-gen memory, even if it means higher costs upfront.
Samsung’s success with 1c DRAM is pivotal, especially as it lines up its HBM4 offerings. Competitors such as SK Hynix and Micron have already fine-tuned their products, leaving Samsung under pressure to catch up. Given the company’s past missteps, especially following the HBM3 challenges, Samsung needs to nail the 1c DRAM process to meet industry expectations.
Right now, it’s a bit of a guessing game regarding Samsung’s 6th-gen DRAM. However, there’s talk that we might witness some developments soon, potentially putting Samsung’s HBM4 process on the path to mass production by year’s end.
